Optical absorption enhancement in LTG-GaAs for efficiency improvement of THz photoconductive antennas

M. Bashirpour, S. Ghorbani, M. Forouzmehr, M. Kolahdouz, M. Neshat
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引用次数: 6

Abstract

A novel structure for THz photoconductive antennas (PCA) has been proposed to enhance the optical absorption, and consequently the power conversion efficiency. In the proposed structure, the surface of the low-temperature-grown GaAs (LTG-GaAs) substrate is textured to create an array of nanodisks where an array of silver nanodisks is placed 300 nm under the surface. The simulation results indicate that laser pulse reflection from the LTG-GaAs surface decreases to less than one percent as compared to around 30 % reflection for surfaces with no nanostructure features. As a result, the photo current increases by a factor of around 2.6 for the proposed structure. This would increase the generated THz power by the current enhancement factor squared.
LTG-GaAs光吸收增强对太赫兹光导天线效率的提高
为了提高太赫兹光导天线的光吸收和功率转换效率,提出了一种新的太赫兹光导天线结构。在提出的结构中,低温生长的砷化镓(LTG-GaAs)衬底的表面被纹理化以创建纳米盘阵列,其中银纳米盘阵列放置在表面以下300 nm处。仿真结果表明,LTG-GaAs表面的激光脉冲反射减少到不到1%,而没有纳米结构特征的表面的反射约为30%。因此,对于所提出的结构,光电流增加了约2.6倍。这将增加产生太赫兹功率的电流增强因子的平方。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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