Hardware/software techniques for DRAM thermal management

Song Liu, Brian Leung, Alexander Neckar, S. Memik, G. Memik, N. Hardavellas
{"title":"Hardware/software techniques for DRAM thermal management","authors":"Song Liu, Brian Leung, Alexander Neckar, S. Memik, G. Memik, N. Hardavellas","doi":"10.1109/HPCA.2011.5749756","DOIUrl":null,"url":null,"abstract":"The performance of the main memory is an important factor on overall system performance. To improve DRAM performance, designers have been increasing chip densities and the number of memory modules. However, these approaches increase power consumption and operating temperatures: temperatures in existing DRAM modules can rise to over 95°C. Another important property of DRAM temperature is the large variation in DRAM chip temperatures. In this paper, we present our analysis collected from measurements on a real system indicating that temperatures across DRAM chips can vary by over 10°C. This work aims to minimize this variation as well as the peak DRAM temperature. We first develop a thermal model to estimate the temperature of DRAM chips and validate this model against real temperature measurements. We then propose three hardware and software schemes to reduce peak temperatures. The first technique introduces a new cache line replacement policy that reduces the number of accesses to the overheating DRAM chips. The second technique utilizes a Memory Write Buffer to improve the access efficiency of the overheated chips. The third scheme intelligently allocates pages to relatively cooler ranks of the DIMM. Our experiments show that in a high performance memory system, our schemes reduce the peak DRAM chip temperature by as much as 8.39°C over 10 workloads (5.36°C on average). Our schemes also improve performance mainly due to reduction in thermal emergencies: for a baseline system with memory bandwidth throttling scheme, the IPC is improved by as much as 15.8% (4.1% on average).","PeriodicalId":126976,"journal":{"name":"2011 IEEE 17th International Symposium on High Performance Computer Architecture","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 17th International Symposium on High Performance Computer Architecture","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HPCA.2011.5749756","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 60

Abstract

The performance of the main memory is an important factor on overall system performance. To improve DRAM performance, designers have been increasing chip densities and the number of memory modules. However, these approaches increase power consumption and operating temperatures: temperatures in existing DRAM modules can rise to over 95°C. Another important property of DRAM temperature is the large variation in DRAM chip temperatures. In this paper, we present our analysis collected from measurements on a real system indicating that temperatures across DRAM chips can vary by over 10°C. This work aims to minimize this variation as well as the peak DRAM temperature. We first develop a thermal model to estimate the temperature of DRAM chips and validate this model against real temperature measurements. We then propose three hardware and software schemes to reduce peak temperatures. The first technique introduces a new cache line replacement policy that reduces the number of accesses to the overheating DRAM chips. The second technique utilizes a Memory Write Buffer to improve the access efficiency of the overheated chips. The third scheme intelligently allocates pages to relatively cooler ranks of the DIMM. Our experiments show that in a high performance memory system, our schemes reduce the peak DRAM chip temperature by as much as 8.39°C over 10 workloads (5.36°C on average). Our schemes also improve performance mainly due to reduction in thermal emergencies: for a baseline system with memory bandwidth throttling scheme, the IPC is improved by as much as 15.8% (4.1% on average).
DRAM热管理的硬件/软件技术
主存储器的性能是影响系统整体性能的一个重要因素。为了提高DRAM的性能,设计人员一直在增加芯片密度和存储模块的数量。然而,这些方法增加了功耗和工作温度:现有DRAM模块的温度可以上升到95°C以上。DRAM温度的另一个重要特性是DRAM芯片温度的大变化。在本文中,我们展示了从实际系统的测量中收集的分析,表明DRAM芯片的温度变化可能超过10°C。这项工作的目的是尽量减少这种变化以及峰值DRAM温度。我们首先开发了一个热模型来估计DRAM芯片的温度,并根据实际温度测量验证该模型。然后,我们提出了三种硬件和软件方案来降低峰值温度。第一种技术引入了一种新的缓存线路替换策略,减少了对过热的DRAM芯片的访问次数。第二种技术利用存储器写缓冲器来提高过热芯片的存取效率。第三种方案智能地将页面分配到相对较冷的内存级别。我们的实验表明,在高性能存储系统中,我们的方案在10个工作负载中(平均5.36°C)将DRAM芯片峰值温度降低了8.39°C。我们的方案还提高了性能,主要是由于减少了热紧急情况:对于具有内存带宽限制方案的基准系统,IPC提高了15.8%(平均4.1%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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