ISM frequency band current-source gate driver for GaN FET transistors

Abstract

Voltage-source integrated gate drivers can be used to drive FET transistors at wide frequency ranges, even up to 30 MHz. However, many problems arise such as: problems with heat dissipation, high output impedance, gate waveform distortion. This paper presents a current-source gate driver with a step-down transformer, dedicated for high frequency driving of GaN FETs. The usage of a step-down transformer provides impedance and voltage matching between primary and secondary side. Theoretical analysis, optimization model, simulation results and laboratory setup results are included. TP65H035WS GaN cascode transistor was driven at two frequency values of about 13.56 MHz and 27.12 MHz.