A frequency-agile RF frontend for multi-band TDD radios in 45nm SOI CMOS

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2013-06-02 DOI:10.1109/RFIC.2013.6569596

Sushmit Goswami, Helen Kim, J. Dawson

引用次数: 1

Abstract

A tunable and highly digital RF frontend for multi-band TDD radios is integrated in 45nm SOI CMOS. The PA absorbs the TX branch of the TX/RX switch with no added loss. Peak PA output power is 27.5±0.5dBm from 1.6 to 3.4GHz, with up to 30% total efficiency at 2V. For TDD LTE applications, better than -30dBc ACLR and -25dB EVM is measured with 16-QAM, 20MHz signals from 1.65 to 3.5GHz, with up to 16.5% average efficiency and 22.9dBm average power. The broadband LNA achieves AV > 14dB, NF=4.3 ± 1.6dB and IIP3 > -7dBm from 1.6 to 3.4GHz while drawing just 6mA from 1V.

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用于45nm SOI CMOS多频段TDD无线电的频率敏捷射频前端

在45nm SOI CMOS中集成了用于多频段TDD无线电的可调谐高数字射频前端。PA吸收TX/RX交换机的TX支路，没有增加损耗。在1.6 ~ 3.4GHz范围内，峰值PA输出功率为27.5±0.5dBm，在2V电压下总效率高达30%。对于TDD LTE应用，采用16qam, 20MHz信号(1.65至3.5GHz)测量-30dBc ACLR和-25dB EVM，平均效率高达16.5%，平均功率为22.9dBm。宽带LNA在1.6至3.4GHz范围内实现了AV > 14dB, NF=4.3±1.6 db和IIP3 > -7dBm，而从1V仅吸收6mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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