A Cad-Oriented Physics-Based Two-Dimensional Gaas Fet Noise Model for Mmic Design

Abstract

A twtrdmensional physics-based noise model for GaAs MESFET’s is described, which can provide, on the balsis of physical and geometrical input parameters o~ily, a full frequency-dependent characterization of the noise performances. The noise model is based on the classical impedance-field method, implemented within the framework of a frequency-domain numerical drift-diffusion physical model. The paper is mainly devoted to the experimental validation of the noise model, which is performed for a re& tic caw study (a 0.6 jtm GEGMarconi MESFET). Stress is laid on the role played by the high-field diffusivity model in noise analysis, which allows a good match to be achieved between measurements and simulation for both the noise figure and the op timuni source impedance.