A new self-data-refresh scheme for a sector erasable 16-Mb flash EEPROM

Symposium 1993 on VLSI Circuits Pub Date : 1993-05-19 DOI:10.1109/VLSIC.1993.920560

A. Umezawa, S. Atsumi, M. Kuriyama, H. Banba, C. Hoshino, K. Naruke, S. Yamada, Y. Ohshima, M. Oshikiri, Y. Hiura, T. Suzuki, K. Yoshikawa

引用次数: 2

Abstract

A newly developed refresh scheme is introduced in a 16-Mb flash EEPROM. By providing each refresh block with its own nonvolatile element, excessive voltage stress of the flag element can be eliminated during the erase/program cycling. A small sector erase can be realized in the 16-Mb flash memory with this scheme. The EEPROM is realised in a 0.6 /spl mu/m single-metal triple-well CMOS process technology.

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一种新的扇区可擦除16mb闪存EEPROM的自数据刷新方案

介绍了一种新开发的16mb闪存EEPROM刷新方案。通过为每个刷新块提供其自己的非易失性元件，可以在擦除/程序循环期间消除标志元件的过度电压应力。该方案可在16mb闪存中实现小扇区擦除。EEPROM采用0.6 /spl mu/m单金属三孔CMOS工艺技术实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Symposium 1993 on VLSI Circuits

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