Analysis and Simulation of a High Efficiency InGaP/GaAs Single junction Solar Cell

Abstract

This paper deals with the TCAD based simulation of single bond GaAs/GaInP solar cell with presence two back BSF region. GaAlAs upper region, GaInP BSF, GaAIAs buffer layers must be correctly examined to inflate the function of mock-uped solar cell. Presence regarding double BSF layer of the GaInP separate junction sun cell displayed deeply elevated I-V feature (addition of η=24%; Jsc = 0.0152 A; Voc =1.356 V, FF =1.199) compared to presence of single BSF layer $(\eta=18.55{\%}$; Jsc = 0.0148 A; Voc =1.4096 V, FF =0.8867)