High-speed and high-saturation power semiconductor waveguide photodetector structures

Abstract

In the present work, two new approaches are investigated to simultaneously improve the saturation power and linearity: a) using a three layer waveguide structure with an InGaAsP (/spl lambda//sub g/ = 1.24 /spl mu/m) active layer, that operates through the Franz-Keldysh effect (FKE), and b) using a four-layer large optical cavity (LOG) asymmetric waveguide with InGaAs absorber and a passive InGaAsP layer.