Growth of Yttria-Stabilized Zirconia Thin Layer on Silicon Wafer Substrate (100) Using Pulsed Laser Deposition

Abstract

Researches of a thin layer are one of the main studies in the materials on electronics. The deposition process of the yttria-stabilized zirconia (YSZ) thin film on a silicon wafer sub-strate (100) was carried out using pulsed laser deposition (PLD). The thin layer is grown for 50 minutes within frequency 10 Hz, pressure in the range 200-225 mTorr, Treatment of temperature in the silicon wafer as a deposit is 800°C. Furthermore, samples were characterized using an atomic force microscope (AFM), X-ray diffractometer (XRD), scanning electron microscope – energy dispersive spectroscope (SEM-EDS). This research shows that the thin film formed contains Zr4+ and Y3+ with the cubic and tetragonal phase crystal structure. The characterization of the roughness of thin film was very smoothly formed, with the range has 28 nm.