Design for variability in DSM technologies [deep submicron technologies]

Abstract

Process-induced parameter variations cause performance fluctuations and are an important consideration in the design of high performance digital ICs. Until recently, it was sufficient to model die-to-die shifts in device (active) and wire (passive) parameters, leading to a natural worst-case design methodology. In the deep-submicron era, however, within-die variations in these same device and wire parameters become just as important. In fact, current integrated circuits are large enough that variations within the die are as large as variations from die-to-die. Furthermore, while die-to-die shifts are substantially independent of the design, within-die variations are profoundly influenced by the detailed physical implementation of the IC. This changes the fundamental view of process variability from something that is imposed on the design by the fabrication process to something that is co-generated between the design and the process. This paper starts by examining the sources and historical trends in device and wire variability, distinguishing between inter-die and intra-die variations, and proposes techniques for design for variability (DOV) in the presence of both types of variations.