Organic Thin Film Transistor Architecture, Parameters and their Applications

P. Mittal, B. Kumar, Y. S. Negi, B. Kaushik, R.K. Singh
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引用次数: 35

Abstract

Organic Thin Film Transistors (OTFTs) are promising devices for future development of variety of low-cost and large-area electronics applications such as flexible displays. This paper analyzes the performance of OTFT made of several organic semi conducting and insulating materials and further discusses their applications. Analysis of previous research work demonstrates that the mobility in OTFT decreases when the product of semi conducting film thickness and gate capacitance per unit area increases. The decrease is specified by a power law function with parameters for several organic semiconductors. OTFT characteristics have undergone spectacular improvements during the last few years. This paper explores the effect of variation of channel length from 40 nm to 20 nm on drain current for pentacene bottom contact structure. Variations in these quantities maps to variations in the electrical behaviour of devices. It has been found that drain current increases due to decrease in length of organic thin film conducting channel. It reviews recent progress in parameter properties for device designs and applications related to OTFTs. The performance of OTFTs is evaluated in terms of mobility, on/off current ratio, threshold voltage and sub threshold slope. This paper thoroughly discusses the overall performance and applications of OTFTs in various fields.
有机薄膜晶体管的结构、参数及其应用
有机薄膜晶体管(OTFTs)是未来各种低成本和大面积电子应用(如柔性显示器)发展的有前途的器件。本文分析了几种有机半导体和绝缘材料制成的OTFT的性能,并进一步讨论了它们的应用。对以往研究工作的分析表明,当半导体薄膜厚度与单位面积栅电容的乘积增大时,OTFT中的迁移率降低。对于几种有机半导体,用带参数的幂律函数来表示这种减小。在过去的几年中,OTFT特性经历了惊人的改进。研究了40 ~ 20 nm通道长度变化对并五苯底接触结构漏极电流的影响。这些量的变化映射到设备电气行为的变化。研究发现,随着有机薄膜导电通道长度的减小,漏极电流增大。它回顾了与OTFTs相关的器件设计和应用的参数属性的最新进展。从迁移率、通/关电流比、阈值电压和亚阈值斜率等方面评价了OTFTs的性能。本文对otft的总体性能及其在各个领域的应用进行了深入的探讨。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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