Replacement Policies for Heterogeneous Memories

Jacob Brock, Chencheng Ye, C. Ding
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引用次数: 2

Abstract

As non-volatile memory is introduced alongside traditional memory, new mechanisms for managing memory are becoming necessary. In this paper, we propose the two variable-space heterogeneous VMIN (H-VMIN) and heterogeneous WS (H-WS) policies for flat DRAM-PCM heterogeneous architectures, which derive from the earlier VMIN and WS policies. After a page reference, H-VMIN keeps the page in DRAM/PCM/disk based on the time until its next access. It is optimal, but requires future information. H-WS keeps the page in DRAM for a certain time and then in PCM for a longer time if it has still not been reused, and finally evicts it to disk.
异构内存的替换策略
随着非易失性存储器与传统存储器一起被引入,管理存储器的新机制变得非常必要。本文提出了两种可变空间异构VMIN (H-VMIN)和异构WS (H-WS)策略,这两种策略是在早期VMIN和WS策略的基础上发展而来的。在页面引用之后,H-VMIN根据时间将该页保存在DRAM/PCM/磁盘中,直到下一次访问。这是最优的,但需要未来的信息。H-WS将该页在DRAM中保存一段时间,如果该页仍未被重用,则在PCM中保存更长的时间,最后将其驱逐到磁盘。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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