Improved Hybrid MOSFET/driver Switching Module for pulsed power applications

T. Tang, C. Burkhart
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引用次数: 6

Abstract

Currently, there is no commercially available high voltage power MOSFET suitable for ultra-fast (∼1ns switching) short pulse (∼5ns) generation. A Hybrid MOSFET/driver Switching Module (HSM) has been demonstrated at the SLAC National Accelerator Laboratory, which is capable of generating a 1 kV, 1 ns rise time pulse across a 30 ohm load. This HSM is under development for use in the ILC damping ring kickers, which require modulators that can deliver ±5 kV pulses with a 2 ns flattop and 1 ns rise and fall time at a 6 MHz burst pulse repetition frequency. The HSM is also very attractive for the proposed Project X broadband chopper which requires similar switching speed (∼1 ns) and pulse width (∼4 ns). A second generation HSM is under development with improved modularity, increased power handling capability, and reduced minimum pulse width. Details of this HSM design and initial test results are presented in this paper.
用于脉冲功率应用的改进混合MOSFET/驱动器开关模块
目前,还没有商用的高压功率MOSFET适合超高速(~ 1ns开关)短脉冲(~ 5ns)产生。一种混合MOSFET/驱动器开关模块(HSM)已经在SLAC国家加速器实验室进行了演示,该模块能够在30欧姆负载上产生1 kV, 1 ns的上升时间脉冲。该HSM正在开发中,用于ILC阻尼环启动器,要求调制器能够在6 MHz突发脉冲重复频率下提供±5 kV脉冲,平顶时间为2 ns,上升和下降时间为1 ns。HSM对于提议的Project X宽带斩波器也非常有吸引力,该斩波器需要类似的开关速度(~ 1 ns)和脉冲宽度(~ 4 ns)。第二代HSM正在开发中,具有改进的模块化、增强的功率处理能力和减小的最小脉冲宽度。文中介绍了该高速切削机床的设计细节和初步试验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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