A general overview of memristor devices

Faten Ouaja Rziga, Khaoula Mbarek, S. Ghedira, K. Besbes
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Abstract

The nanoscale memristive devices will contribute to the development of new applications in the field of micro and nanoelectronics. Indeed, these nanodevices can bring new architectures and configurations, through their sizes, consumptions, functioning and their electronic properties, which differ considerably from the old devices. In 1971, Prof. Leon Chua of UC Berkeley has claimed that a fourth passive device should exist, which holds the relationship between magnetic flux and electric charge. In addition, this device named “memristor” was only manufactured in 2008 by HP Lab team. He also proved that the behavior of the memristor should complement the functions of the other three passive elements by bringing a new dynamic. The aim of this paper is to understand the memristor's operation, to introduce and to model its operation for new electronic functions, essentially nonlinear, and to reinforce its integration with other architectures such as CMOS.
忆阻器器件的总体概述
纳米忆阻器件将为微纳米电子学领域的新应用发展做出贡献。事实上,这些纳米器件可以带来新的架构和配置,通过它们的尺寸、消耗、功能和电子特性,这与旧器件有很大的不同。1971年,美国加州大学伯克利分校(UC Berkeley)的蔡利昂(Leon Chua)教授声称,应该存在第四种无源器件,它能反映磁通量和电荷之间的关系。此外,这种名为“忆阻器”的设备是由惠普实验室团队在2008年才制造出来的。他还证明了忆阻器的行为应该通过带来新的动态来补充其他三种无源元件的功能。本文的目的是了解忆阻器的操作,介绍和模拟其新的电子功能,本质上是非线性的,并加强其与其他架构(如CMOS)的集成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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