Determination of the MESFET Resistive Parameters using Rf-Wafer Probing

Abstract

A simple method has been proposed to measure the resistive parameters of MESFET's. An equivalent circuit of the forward biased FET valid in a low frequency limit which allows to determine the gate, source and drain parasitic resistances from the measured parameters was developed. The ideality factor of the gate diode and the channel resistance can also be simply determined. The method does not require separate DC characterisation and can be applied in conjunction with the small-signal microwave S-matrix measurements.