Operating analysis of SiC DC/DC power converter for synchronous and asynchronous modulation

Abstract

In this paper, operating analysis of SiC MOSFET based DC/DC power converter is presented. A comparative analysis is carried out for a synchronous- and asynchronous modulation technique. A mathematical description of steadystate properties, i.e. output voltage, current- and voltage ripple, was assumed based on a continuous-time model, including power losses. The investigated power converter was based on third generation 3M0120090J transistors and sixth generation C4D10120A diodes. The experimental tests were realized for a 3.2 kilowatt (400V, 8A) power converter with a fixed switching frequency. The efficiency investigations were carried out for a wide operating range for both modulation strategies.