Re-model fabricated memristor behavior in LT-SPICE and applied in logic circuit

Siti Musliha Ajmal Binti Mokhtar, W. Abdullah
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引用次数: 8

Abstract

A fabricated memristor behavior has been remodel in LT-SPICE and presented in this paper. Memristor SPICE models are important for designers to exhibit memristor behavior since memristor is not yet available in market. Among important parameters in memristor SPICE model is RON, ROFF and TiO2 thickness. This is because different RON and ROFF value results in different switching behavior. In this paper, RON and ROFF are obtained from fabricated memristor graph gradient. The values are applied as memristor model parameters. The behavior of this model is in agreement with the measurements of fabricated memristor. Next, NAND and NOR circuits are designed using the SPICE model and circuits are working based on the simulation results. The memristor SPICE model parameters are based on fabricated memristor model and it has similar behavior with fabricated memristor model. Thus it is convincing that fabricated memristor will work in real circuit.
在LT-SPICE中重构了预制忆阻器的行为并应用于逻辑电路
本文介绍了在LT-SPICE中重构了一个预制的忆阻器的行为。忆阻器SPICE模型对于设计师展示忆阻器行为非常重要,因为忆阻器尚未在市场上可用。记忆电阻器SPICE模型的重要参数是RON、ROFF和TiO2厚度。这是因为不同的RON和ROFF值会导致不同的开关行为。本文用自制的忆阻图梯度法得到了RON和ROFF。这些值作为忆阻器模型参数。该模型的行为与自制的忆阻器的测量结果一致。其次,利用SPICE模型设计了NAND和NOR电路,并根据仿真结果进行了电路的工作。忆阻器SPICE模型参数基于预制忆阻器模型,其性能与预制忆阻器模型相似。因此,制造的忆阻器在实际电路中工作是令人信服的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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