(n+/p/p+) Silicon solar cell base thickness optimization under modulated short wavelength illumination, at resonances in both frequency and temperature of minority carriers’ diffusion coefficient

Abstract

The magneto-transport equation relating to the density of photogenerated minority carriers in the (p) base of the (n+/p/p+) solar cell illuminated by monochromatic light in frequency modulation, is solved. The diffusion coefficient of the minority carriers in the base, placed under temperature and magnetic field variation, passes through a maximum, at the double resonance points, in temperature and at the frequency of the cyclotron. The photocurrent is reproduced as a function of the recombination velocity at the junction, for the maximum values of the diffusion coefficient. The expressions of the minority carriers ’recombination velocity on the rear side are deduced and their graphical representation gives the optimum thickness, specific to a high absorption coefficient, for the maximum values of the diffusion coefficient. The results obtained from the optimum thickness are modelled and analyzed, in favor of a reduction of silicon material, for the development of economical solar cells.