A 300MHz to 1200MHz saturated broadband amplifier in GaN for 2W applications

2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS) Pub Date : 2016-03-01 DOI:10.1109/WMCAS.2016.7577491

Q. Diduck, W. Godycki, C. Khandavalli, R. Booth, D. Babic, E. McCune, D. Kirkpatrick

引用次数: 7

Abstract

A broadband power amplifier that provides a nearly flat power and efficiency response over two octaves of frequency is presented. The maximum output power exceeds 2 watts over the entire frequency range of 300MHz to 1200MHz. This amplifier also operates with total amplifier efficiency exceeding 50% across the entire operating frequency range. A GaN technology with 0.14 micron gate length is used.

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一个300MHz至1200MHz饱和宽带放大器在氮化镓的2W应用

提出了一种宽带功率放大器，在两个倍频的频率范围内提供近乎平坦的功率和效率响应。在300MHz至1200MHz的整个频率范围内，最大输出功率超过2瓦。该放大器还可以在整个工作频率范围内以超过50%的总放大器效率运行。采用栅极长度为0.14微米的GaN技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)

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