Forced Wetting by Ion Implantation for Liquid Nanoelectronics

F. V. von Kleist-Retzow, S. Fatikow
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Abstract

In this paper a strategy for and the fabrication of liquid metal (LM) nanoelectronics is presented. Two techniques that were invented by our group are combined for the highly accurate fabrication of arbitrary two-dimensional LM structures. The electromigration technique is applied for the highly controllable fabrication of LM volumes and the forced wetting by ion implantation technique is used for the manipulation of LM reservoirs into functionalized structures. The ion implantation technique represents a completely new technique for nanoscale LM manipulation and offers new possibilities for reversible and highly accurate patterning of surfaces using LM. By combining these two techniques, LM can be patterned into nanoelectronic components. These components are afterwards characterized by AC and RF measurements. The results obtained show the beneficial effects of using the LM. Both contact resistance and abrasion effects are significantly reduced, which can greatly extend the longevity of electronic components and significantly reduce measurement errors.
离子注入在液体纳米电子学中的强制润湿
本文介绍了液态金属(LM)纳米电子学的制备策略。本课题组发明的两种技术相结合,实现了任意二维LM结构的高精度制造。电迁移技术应用于LM体积的高度可控制备,离子注入强制润湿技术用于操纵LM储层成为功能化结构。离子注入技术代表了纳米尺度LM操作的一种全新技术,并为利用LM进行可逆和高精度的表面图像化提供了新的可能性。通过结合这两种技术,LM可以成为纳米电子元件。然后通过交流和射频测量来表征这些组件。实验结果表明,使用中药具有良好的效果。接触电阻和磨损效应均显著降低,可大大延长电子元件的使用寿命,并显著降低测量误差。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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