High power 1550 nm twin-photodetector modules with 45 GHz bandwidth based on InP

Andreas Beling, D. Schmidt, H. Bach, G. Mekonnen, R. Ziegler, V. Eisner, M. Stollberg, G. Jacumeit, E. Gottwald, C. Weiske
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引用次数: 19

Abstract

In summary we fabricated and characterized integrated differential photodetector modules with 35 GHz and 45 GHz electrical bandwidth. The devices show total responsivities of 0.41 A/W and 0.31 A/W respectively and PDL of less than 0.5 dB. The ratio of the photocurrents remains below 0.5 dB for different states of polarization demonstrating an excellent electrical and optical symmetry. The modules deliver high electrical output pulses of differential polarity in the 1 Volt regime to switch directly all known 40 Gbit/s demux electronics implemented in SiGe, GaAs or InP technology.
基于InP的45 GHz带宽高功率1550 nm双光电探测器模块
总之,我们制作并表征了35 GHz和45 GHz电带宽的集成差分光电探测器模块。器件的总响应度分别为0.41 A/W和0.31 A/W, PDL小于0.5 dB。在不同的极化状态下,光电流比保持在0.5 dB以下,显示出良好的电学和光学对称性。这些模块在1伏范围内提供差分极性的高电输出脉冲,以直接切换所有已知的SiGe, GaAs或InP技术中实现的40 Gbit/s demux电子设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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