1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882332

S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren

引用次数: 1

Abstract

We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.

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1.55-/spl mu/m，在CW下在RT下运行的inp晶格匹配vcsel

我们展示了一个1.55-/spl mu/m的InGaAs垂直腔面发射激光器(VCSEL)的第一个室温连续波(CW)操作，该激光器完全与InP晶格匹配，并在一次外延生长中产生。该结构采用带气隙孔径的腔内接触。阈值电流和阈值电流密度分别为6.2mA和1.97kA/cm/sup 2/，温度为200℃，电流孔径为20-/spl mu/m-直径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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