The study of temperature-dependent degradation of optical output on 808 nm GaAs-Based High-Power Laser Diode Bars

Abstract

The degradation mechanism of 808nm GaAs-based high-power laser diode bars (LDBs) with 6 single laser diodes was investigated using infrared thermography and photoemission microscopy. Over time, measurements of output power indicated that one of the 6 laser bars had a serious degradation of output power. Infrared imaging and photoemission microscopy revealed that solder voids during packaging resulted in premature failure due to high temperatures in the lasing region. The current reliability of LDB devices is compromised by these packaging defects.