A 9MHz filtering ADC with additional 2nd-order ΔΣ modulator noise suppression

Mattias Andersson, Martin Anderson, Lars Sundström, S. Mattisson, P. Andreani
{"title":"A 9MHz filtering ADC with additional 2nd-order ΔΣ modulator noise suppression","authors":"Mattias Andersson, Martin Anderson, Lars Sundström, S. Mattisson, P. Andreani","doi":"10.1109/ESSCIRC.2013.6649138","DOIUrl":null,"url":null,"abstract":"This paper presents a filtering ADC for the LTE standard, where a Delta-Sigma modulator (DSM) is merged into the channel-select filter (CSF) of the LTE radio receiver. The CSF introduces an additional 2nd-order suppression of both quantization and thermal DSM noise, while the CSF transfer function is essentially maintained. The 65 nm CMOS prototype is clocked at 288MHz with a 9MHz LTE bandwidth, and has an input-referred noise of 8.1 nV/√Hz, 12 dB gain, and an in/out-of-band IIP3 of 11.5/27 dBVrms, with a power consumption of 11.3mW, resulting in state-of-the-art figure-of-merits (FOMs) for filtering ADCs.","PeriodicalId":183620,"journal":{"name":"2013 Proceedings of the ESSCIRC (ESSCIRC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Proceedings of the ESSCIRC (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2013.6649138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11

Abstract

This paper presents a filtering ADC for the LTE standard, where a Delta-Sigma modulator (DSM) is merged into the channel-select filter (CSF) of the LTE radio receiver. The CSF introduces an additional 2nd-order suppression of both quantization and thermal DSM noise, while the CSF transfer function is essentially maintained. The 65 nm CMOS prototype is clocked at 288MHz with a 9MHz LTE bandwidth, and has an input-referred noise of 8.1 nV/√Hz, 12 dB gain, and an in/out-of-band IIP3 of 11.5/27 dBVrms, with a power consumption of 11.3mW, resulting in state-of-the-art figure-of-merits (FOMs) for filtering ADCs.
9MHz滤波ADC,附加二阶ΔΣ调制器噪声抑制
本文提出了一种LTE标准的滤波ADC,其中将Delta-Sigma调制器(DSM)合并到LTE无线电接收机的信道选择滤波器(CSF)中。CSF引入了额外的二阶抑制量化和热DSM噪声,同时基本上保持了CSF传递函数。65nm CMOS样机的时钟频率为288MHz, LTE带宽为9MHz,输入参考噪声为8.1 nV/√Hz,增益为12 dB,带内/带外IIP3为11.5/27 dBVrms,功耗为11.3mW,可为滤波adc提供最先进的性能指标(FOMs)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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