{"title":"A high-speed POF receiver with 1 mm integrated photodiode in 180 nm CMOS","authors":"F. Tavernier, M. Steyaert","doi":"10.1109/ECOC.2010.5621473","DOIUrl":null,"url":null,"abstract":"The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.","PeriodicalId":391144,"journal":{"name":"36th European Conference and Exhibition on Optical Communication","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"36th European Conference and Exhibition on Optical Communication","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECOC.2010.5621473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
The design and measurement of an optical receiver is presented. To minimize cost, it is completely integrated on silicon in a CMOS process. In spite of the large parasitic photodiode capacitance, transient measurements are shown up to 800 Mbit/s.