Degradation mechanisms of embedded cooling systems for high heat flux power electronics: Particle erosion of silicon and silicon carbide

D. Squiller, I. Movius, M. Ohadi, P. McCluskey
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Abstract

Embedded cooling systems have enabled higher volumetric heat removal rates at the chip and package levels, permitting advanced power electronic devices to operate closer to their inherent electrical limits. By embedding microchannels directly into the chip or substrate, higher local and global heat fluxes can be reached as the heat removal takes place in close proximity to the source. As this emerging technology finds its way into aerospace, military and commercial applications, reliability will be of utmost importance. This paper will address the fundamental reliability concerns and degradation mechanisms associated with embedded cooling systems, specifically those pertaining to particle erosion. This mechanism has the potential to hinder the active cooling of the electronics by altering the microfluidic geometries and by subsequently restricting or blocking fluid paths due to the increased particle concentration in the fluid. A slurry erosion jet-impingement testing apparatus was constructed to investigate how factors such as particle size, particle concentration, impingement angle and velocity affect the erosion of single crystal silicon and silicon carbide. The test setup is capable of handling velocities up to 60 m/s, particle sizes ranging from the nanometer scale to tens of micrometers, impingement angles from 10 to 90 degrees, and is chemically compatible with a variety of working fluids including deionized water and propylene and ethylene glycols. The main goal of this research is to identify threshold velocities and threshold particle sizes under which no erosion will occur. Additionally, a procedure to develop a new model has been proposed which considers factors that current particle erosion models do not consider such as particle concentration and fluid viscosity.
高热流功率电子设备嵌入式冷却系统的退化机制:硅和碳化硅的颗粒侵蚀
嵌入式冷却系统在芯片和封装级别上实现了更高的体积散热率,允许先进的电力电子设备更接近其固有的电气极限。通过将微通道直接嵌入芯片或衬底,可以达到更高的局部和全局热流,因为热量的去除发生在靠近源的地方。随着这项新兴技术进入航空航天、军事和商业应用领域,可靠性将是至关重要的。本文将讨论与嵌入式冷却系统相关的基本可靠性问题和退化机制,特别是与颗粒侵蚀有关的问题。这种机制有可能通过改变微流体的几何形状,并随后由于流体中颗粒浓度的增加而限制或阻塞流体路径,从而阻碍电子器件的主动冷却。搭建了浆体冲蚀射流冲蚀试验装置,研究了粒径、颗粒浓度、冲蚀角和冲蚀速度等因素对单晶硅和碳化硅冲蚀的影响。该测试装置能够处理高达60m /s的速度,粒径范围从纳米级到几十微米,撞击角从10到90度,并且与多种工作流体(包括去离子水、丙烯和乙二醇)具有化学兼容性。本研究的主要目标是确定阈值速度和阈值粒径,在此阈值速度和阈值粒径下不会发生侵蚀。此外,还提出了一种开发新模型的程序,该模型考虑了当前颗粒侵蚀模型未考虑的因素,如颗粒浓度和流体粘度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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