Chujun Lin, Hongying Chen, Weidong Xu, Fang Gao, Xin'an Wang
{"title":"A novel high-precision bandgap reference with differential common-gate structure","authors":"Chujun Lin, Hongying Chen, Weidong Xu, Fang Gao, Xin'an Wang","doi":"10.1109/ICASID.2015.7405659","DOIUrl":null,"url":null,"abstract":"This paper proposes a novel kind of bandgap reference (BGR) with high precision and high power supply rejection ratio (PSRR) by using optimized differential common-gate structure and a cascode amplifier. The circuit uses the standard 0.18 μm CMOS process. The simulation results indicate that the temperature range is -20°C to 80°C and the temperature coefficient (TC) less than 27 ppm/°C is achieved at all process corners. Line regulation is better than 0.045%/V and the power supply rejection ratio in low frequency is close to 56dB. The supply voltage of the proposed bandgap reference ranges from 1.8V to 3.5V while the maximum supply current is 36μA at room temperature.","PeriodicalId":403184,"journal":{"name":"2015 IEEE 9th International Conference on Anti-counterfeiting, Security, and Identification (ASID)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 9th International Conference on Anti-counterfeiting, Security, and Identification (ASID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICASID.2015.7405659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper proposes a novel kind of bandgap reference (BGR) with high precision and high power supply rejection ratio (PSRR) by using optimized differential common-gate structure and a cascode amplifier. The circuit uses the standard 0.18 μm CMOS process. The simulation results indicate that the temperature range is -20°C to 80°C and the temperature coefficient (TC) less than 27 ppm/°C is achieved at all process corners. Line regulation is better than 0.045%/V and the power supply rejection ratio in low frequency is close to 56dB. The supply voltage of the proposed bandgap reference ranges from 1.8V to 3.5V while the maximum supply current is 36μA at room temperature.