Design and Fabrication of Ge on Si Micro-Hole Array Vertical Illuminated Photodetector for Infrared Detection

Abstract

In this work, the Ge on Si vertical illuminated photodetector with the micro-hole array is designed and fabricated. The result of the simulation reveals a 180 % enhancement of the structure at 1.55 µm. The low dark current is 4.7E-10 A at -1 V.