A novel high-voltage LDMOS with shielding-contact structure for HCl SOA enhancement

Abstract

This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reduction and significant HCl SOA improvement have been verified on real Silicon. Newly layout with Slot-Poly design has been investigated for better process control as well.