High power heterojunction GaAs switch IC with P-1 dB of more than 38 dBm for GSM application

Abstract

A high power handling of 4 W and low control voltage of +3/0 V GaAs Switch IC, available for the hand-held phone unit for GSM dual and triple mode applications, has been successfully developed. As a basic switch element, heterojunction FET technology has been applied. The optimized stacked-structure with a dual-gate-FET and a triple-gate-FET has demonstrated high linearity of Pin-Pout with a P-1 dB (Pin) of more than 38 dBm, an insertion loss of less than 0.6 dB and an isolation of more than 22 dB in a wide frequency range of 0.5 GHz to 2.0 GHz.