Emission Properties of Metal-oxide-semiconductor Cathodes based on Nanocrystalline Silicon

Abstract

A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to 5 nm.