TCAD based segmented modelling of large RF power-transistors-die for finger level analysis and optimization

Abstract

A modeling method for RF power transistor fingers and large discrete die is presented in order to evaluate, visualize, and optimize various performance parameters at the device finger level. The model is constructed using a combination of TCAD based active die model and passive interconnect models based on Wheeler's transmission line formulation. Active die model of a fraction of the total periphery are connected with the interconnect models to build arbitrarily sized RF power transistors. The advantage of such model is shown to be flexibility of probing different parameters (e.g. voltage, current) at distinct die locations. Additionally, interconnect of the power transistor can be optimized in the simulation space in order to realize improved performance.