Noise Suppression in VLSI Circuits Using Dummy Metal Fill

S. Gaskill, Vikas S. Shilimkar, A. Weisshaar
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引用次数: 2

Abstract

Modern IC processes require metal fill patterning to achieve global uniformity of the metallization/oxide layers. Electrically these fills are often viewed as parasitics to be minimized. In this paper we actively use metal fill to suppress crosstalk noise between coupled traces by selectively grounding metal fills. However, the tradeoff of this improvement is higher total capacitance leading to increased interconnect delay times. We propose design rules that optimize this tradeoff between crosstalk and delay. The design parameters considered include placement of grounded fills, buffer distance and fill shapes. We show that it is best to start grounding metal fills farthest away from the signal traces.
利用假金属填充抑制VLSI电路中的噪声
现代集成电路工艺需要金属填充图案来实现金属化/氧化层的全局均匀性。从电的角度来看,这些填充物通常被认为是要最小化的寄生物。本文通过选择性地接地金属填料,主动利用金属填料抑制耦合走线间的串扰噪声。然而,这种改进的代价是更高的总电容导致互连延迟时间增加。我们提出了优化串扰和延迟之间权衡的设计规则。考虑的设计参数包括接地填充物的位置、缓冲距离和填充物形状。我们表明,最好在离信号走线最远的地方开始接地金属填料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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