Robust thin film thermoelectric devices

Abstract

The distribution of thermal stresses in thermoelectric columns with superlattice structure was analyzed by numerical simulation. This analysis focused on Bi/sub 2/Te/sub 3/ compounds used for cooling purpose. The dimensions used for analysis are achievable by using metal organic chemical vapor deposition (MOCVD), technology which can economically fabricate high quality thermoelectric devices. Various mechanical constraints were used for simulation. The calculated stresses within thermoelectric (TE) devices made of bulk material were also evaluated. Because the superlattice structure assembly is mechanically similar to other thin film designs, these results can be applied to TE devices made by different thin film techniques.