Studies of InGaAs layers growth by metalorganic chemical vapor deposition for InP-HEMTs; Effects of trimethylindium and triethylindium

R. Sakai, M. Uchida, G. Araki
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Abstract

We studied an InGaAs epitaxial layers growth by metalorganic chemical vapor deposition (MOCVD) for InP-based high electron mobility transistors (HEMTs). The InGaAs channel layer of HEMTs was grown by a new material combination of triethylindium (TEI), triethylgallium (TEG) and arsine (AsH3). An electron mobility of the HEMTs structure sample was 20% higher than the one grown by trimethylindium (TMI), TEG and AsH3. And the DC characteristics of the HEMTs, the drain current and transconductance, were increased compared with the one. It is confirmed that this growth method is quite effective for the improvement of a characteristics of InP-based HEMTs
金属有机化学气相沉积法制备InP-HEMTs InGaAs层的研究三甲基lindium和三乙基lindium的作用
研究了金属有机化学气相沉积(MOCVD)法制备inp基高电子迁移率晶体管(HEMTs)的InGaAs外延层。采用三乙基lindium (TEI)、三乙基镓(TEG)和arsine (AsH3)的新材料组合生长hemt的InGaAs通道层。HEMTs结构样品的电子迁移率比三甲基lindium (TMI)、TEG和AsH3生长的样品高20%。hemt的直流特性,漏极电流和跨导都比前者有所增加。结果表明,这种生长方法对提高inp基hemt的a特性是非常有效的
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