Hegong Wei, U. Chio, Yan Zhu, Sai-Weng Sin, S. U, R. P. Martins
{"title":"A process- and temperature- insensitive current-controlled delay generator for sampled-data systems","authors":"Hegong Wei, U. Chio, Yan Zhu, Sai-Weng Sin, S. U, R. P. Martins","doi":"10.1109/APCCAS.2008.4746239","DOIUrl":null,"url":null,"abstract":"This paper proposes a process- and temperature-insensitive current-controlled delay generator which can be widely used in sampled-data systems. The delay generator provides a large tunable range by adjusting the control current and load capacitance. Full transistor-level simulations, including process corner and Monte-Carlo analysis, are presented. The delay generator is designed in 90 nm CMOS technology and consumes 330 muW power from a 1.2 V power supply, at a typical case of using 10 muA control current and 30 fF load capacitance. The process corner simulation results exhibit a typical delay of 2.09 ns with a corner variation of -7.1% / +7.6%. The 500-times process Monte-Carlo simulation obtains a mean of 2.09 ps with a standard-deviation (sigma) of 28.9 ps (1.38%).","PeriodicalId":344917,"journal":{"name":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"APCCAS 2008 - 2008 IEEE Asia Pacific Conference on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS.2008.4746239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
This paper proposes a process- and temperature-insensitive current-controlled delay generator which can be widely used in sampled-data systems. The delay generator provides a large tunable range by adjusting the control current and load capacitance. Full transistor-level simulations, including process corner and Monte-Carlo analysis, are presented. The delay generator is designed in 90 nm CMOS technology and consumes 330 muW power from a 1.2 V power supply, at a typical case of using 10 muA control current and 30 fF load capacitance. The process corner simulation results exhibit a typical delay of 2.09 ns with a corner variation of -7.1% / +7.6%. The 500-times process Monte-Carlo simulation obtains a mean of 2.09 ps with a standard-deviation (sigma) of 28.9 ps (1.38%).