22.9 A 1310nm 3D-integrated silicon photonics Mach-Zehnder-based transmitter with 275mW multistage CMOS driver achieving 6dB extinction ratio at 25Gb/s

Marco Cignoli, Gabriele Minoia, M. Repossi, D. Baldi, A. Ghilioni, E. Temporiti, F. Svelto
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引用次数: 41

Abstract

In this scenario, this work presents a complete 25Gb/s silicon photonics electro-optical transmitter front-end comprising an MZM, using carrier depletion P-N junctions and operating at 1310nm wavelength, and a power-efficient CMOS driver. The transmitter optical path is integrated on STMicroelectronics 3Dcompatible silicon-photonics platform (PIC25G), which implements only optical devices in the front-end of line (FEOL) [4]. The electronic IC, realized in 65nm bulk CMOS technology, is 3D-assembled on top of the photonic IC by means of 20μm-diameter copper pillars, minimizing the interconnection parasitic capacitance. This 1310nm 25Gb/s silicon photonics electro-optical transmitter reports error-free operation with wide open optical eye diagrams at a competitive dynamic extinction ratio (ER) of up to 6dB using a depletion-mode MZM.
22.9一种1310nm 3d集成硅光子mach - zehnder发射机,具有275mW多级CMOS驱动器,在25Gb/s下实现6dB消光比
在这种情况下,本工作提出了一个完整的25Gb/s硅光子电光发射器前端,包括一个MZM,使用载流子耗尽P-N结,工作在1310nm波长,以及一个节能的CMOS驱动器。发射器光路集成在意法半导体(STMicroelectronics) 3d兼容硅光子平台(PIC25G)上,该平台仅实现线前端(FEOL)[4]的光学器件。电子集成电路采用65nm块体CMOS技术,通过直径20μm的铜柱在光子集成电路上3d组装,最大限度地减少了互连寄生电容。这款1310nm 25Gb/s硅光子学电光发射器使用耗尽模式MZM,在竞争动态消光比(ER)高达6dB的情况下,具有无差错操作和大开放光学眼图。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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