{"title":"Analytical Drain Current Model of UTBB SOI MOSFET with lateral dual gates to Suppress Short Channel Effect","authors":"A. Basak, A. Sarkar","doi":"10.1109/DEVIC.2019.8783327","DOIUrl":null,"url":null,"abstract":"In this paper, we present a 2D analytical modeling of UTBB SOI MOSFET by introducing a gap in the gate for which this new structure behaves like a dual gate MOSFET and compared the result with TCAD simulation. A 2D Poisson's equation is used for solving surface potential profile, electric field distribution, threshold voltage, DIBL and drain current of UTBB SOI MOSFET structure through parabolic approximation method. A comparative study for increasing negative voltage on control gate of this structure has been carried out. Here we observe surface potential profile, electric field distributions, threshold voltage, DIBL and drain current through applying negative voltage on the right gate of the proposed structure. Result reveals that this structure have higher efficacy to reduce short channel effect (SCE) due to the existence of step change in the surface potential distribution and for increasing negative control gate voltage this structure provides better performance for suppression short channel effect.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Devices for Integrated Circuit (DevIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEVIC.2019.8783327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
In this paper, we present a 2D analytical modeling of UTBB SOI MOSFET by introducing a gap in the gate for which this new structure behaves like a dual gate MOSFET and compared the result with TCAD simulation. A 2D Poisson's equation is used for solving surface potential profile, electric field distribution, threshold voltage, DIBL and drain current of UTBB SOI MOSFET structure through parabolic approximation method. A comparative study for increasing negative voltage on control gate of this structure has been carried out. Here we observe surface potential profile, electric field distributions, threshold voltage, DIBL and drain current through applying negative voltage on the right gate of the proposed structure. Result reveals that this structure have higher efficacy to reduce short channel effect (SCE) due to the existence of step change in the surface potential distribution and for increasing negative control gate voltage this structure provides better performance for suppression short channel effect.
在本文中,我们提出了UTBB SOI MOSFET的二维解析建模,通过在栅极中引入一个间隙,这种新结构的行为类似于双栅极MOSFET,并将结果与TCAD仿真进行了比较。利用二维泊松方程,采用抛物线近似法求解了UTBB SOI MOSFET结构的表面电位分布、电场分布、阈值电压、DIBL和漏极电流。并对该结构的控制栅极增加负电压进行了对比研究。通过对该结构的右栅极施加负电压,我们观察了表面电位分布、电场分布、阈值电压、DIBL和漏极电流。结果表明,由于表面电位分布存在阶跃变化,该结构具有较高的抑制短通道效应(SCE)的效果,并且在提高负控制栅电压方面具有较好的抑制短通道效应的性能。