Two-Stage Class-A Power Amplifier with RF Frontend for Transmitter Wireless Applications

Abstract

This article introduces RF wireless integrated transmitter for 5.8 GHz communication and RFID applications. The proposed wireless integrated transmitter consists of two-stage class A CMOS power amplifier (PA) with bandgap voltage reference (BGR) bias, pre-distorter, folded-cascode mixer with balun, differential cross-coupled Colpitts quadrature voltage-controlled oscillator (QVCO), band-pass Gm-C filter and antenna design. The presented PA design presents input/ output return loss of 14dB/23dB, conversion gain of 15.5dB, the output 1-dB compression point (OP$_{1dB}$) of 16.5dBm, two tone test / output 3$^{rd}$ order intercept point (OIP3) of 25.8dBm and power added efficiency (PAE) higher than 23%, respectively. The implemented integrated transmitter using 0.18um CMOS technology with antenna has experimental at anechoic chamber.