RCE PD array/CMOS optoelectronic integrate devices

Abstract

A high-density and high-performance optoelectronic integrated circuit (OEIC) is expected to be used in data communication in massively parallel processors of optical interconnects and optical switching networks. The most desirable optoelectronic integrated circuit is the state-of-the-art circuit, unaffected by the integration with optoelectronics. Some investigations on InGaAs/GaAs multiple quantum well resonance cavity enhanced photo detector (RCE PD) arrays for optoelectronic devices was reported.