{"title":"Design of a Static Current Simulator Using Device Matrix Approach","authors":"D. Bharti, Abhijit R. Asati","doi":"10.1109/ISED.2012.38","DOIUrl":null,"url":null,"abstract":"I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.","PeriodicalId":276803,"journal":{"name":"2012 International Symposium on Electronic System Design (ISED)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Symposium on Electronic System Design (ISED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISED.2012.38","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.