Millimeter-wave Broadband Amplifier using MHEMT

2008 Global Symposium on Millimeter Waves Pub Date : 2008-04-21 DOI:10.1109/GSMM.2008.4534554

Yong-Hyun Baek, Sang Jin Lee, T. Baek, Jung-hun Oh, S. Choi, D. Kang, Sam-Dong Kim, J. Rhee

{"title":"Millimeter-wave Broadband Amplifier using MHEMT","authors":"Yong-Hyun Baek, Sang Jin Lee, T. Baek, Jung-hun Oh, S. Choi, D. Kang, Sam-Dong Kim, J. Rhee","doi":"10.1109/GSMM.2008.4534554","DOIUrl":null,"url":null,"abstract":"In this paper, millimeter-wave broadband cascode amplifiers were designed and fabricated. The 0.1 mum InGaAs/InAlAs/GaAs MHEMT (metamorphic high electron mobility transistor) was fabricated for the cascode amplifier. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 688 mS/mm of maximum transconductance. The current gain cut-off frequency (fT) is 139 GHz and the maximum oscillation frequency (fmax) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (coplanar wave guide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the standard MHEMT MMIC (millimeter-wave monolithic IC) process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz from 20.76 to 71.13 GHz. Also, the amplifier represents the S21 gain with the average 7.07 dB in bandwidth and the maximum gain of 10.3 dB at 30 GHz.","PeriodicalId":304483,"journal":{"name":"2008 Global Symposium on Millimeter Waves","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 Global Symposium on Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GSMM.2008.4534554","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

Abstract

In this paper, millimeter-wave broadband cascode amplifiers were designed and fabricated. The 0.1 mum InGaAs/InAlAs/GaAs MHEMT (metamorphic high electron mobility transistor) was fabricated for the cascode amplifier. The DC characteristics of MHEMT are 670 mA/mm of drain current density, 688 mS/mm of maximum transconductance. The current gain cut-off frequency (fT) is 139 GHz and the maximum oscillation frequency (fmax) is 266 GHz. To prevent oscillation of the designed cascode amplifiers, a parallel resistor and capacitor were connected to the drain of common gate device. By using the CPW (coplanar wave guide) transmission line, the cascode amplifier was designed and matched for the broadband characteristics. The designed amplifier was fabricated by the standard MHEMT MMIC (millimeter-wave monolithic IC) process that was developed through this research. As the results of measurement, the amplifier was obtained 3 dB bandwidth of 50.37 GHz from 20.76 to 71.13 GHz. Also, the amplifier represents the S21 gain with the average 7.07 dB in bandwidth and the maximum gain of 10.3 dB at 30 GHz.

查看原文本刊更多论文

MHEMT毫米波宽带放大器

本文设计并制作了毫米波宽带级联码放大器。制备了用于级联放大器的0.1 μ m InGaAs/InAlAs/GaAs高电子迁移率晶体管(MHEMT)。MHEMT的直流特性为漏极电流密度670 mA/mm，最大跨导688 mS/mm。电流增益截止频率(fT)为139 GHz，最大振荡频率(fmax)为266 GHz。为了防止所设计的级联放大器的振荡，在共栅器件的漏极处连接并联电阻和电容。利用共面波导传输线设计并匹配了级联放大器的宽带特性。设计的放大器采用本研究开发的标准毫米波单片集成电路(MHEMT MMIC)工艺制作。测量结果表明，该放大器在20.76 ~ 71.13 GHz范围内获得了50.37 GHz的3db带宽。此外，放大器代表S21增益，平均带宽为7.07 dB, 30 GHz时最大增益为10.3 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2008 Global Symposium on Millimeter Waves

自引率

0.00%

发文量