Broadband class-E power amplifier for space radar application

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964380

T. Quach, P. Watson, W. Okamura, E. Kaneshiro, A. Gutierrez-Aitken, T. Block, J. Eldredge, T. Jenkins, L. Kehias, A. Oki, D. Sawdai, R. Welch, R. Worley

引用次数: 12

Abstract

We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a class-E power amplifier at X-band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.

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用于空间雷达的宽带e类功率放大器

报道了一种采用磷化铟(InP)双异质结双极晶体管(DHBT)技术的宽带高效功率放大器。该放大器在x波段展示了创纪录的e类功率放大器带宽。该电路在9-11 GHz范围内实现了49-58%的PAE, 18.5-23.9 dBm的输出功率和9.6-10.5 dB的增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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