IGBT dynamics for short-circuit and clamped inductive switching

Abstract

This paper reports and compares the internal dynamics of IGBT under short circuit and clamped inductive switching stress. The performance of IGBTs under short circuit and clamped inductive load conditions has been studied in detail with the aid of extensive measurements and numerical simulations. An advanced mixed device and circuit simulator is employed to study the internal dynamics of latch-up free punch-through IGBT. It is shown that thermally assisted avalanche breakdown of IGBT under the two stress conditions occurs due to localized high temperature generation in different regions of the device.