{"title":"ESD Protection Design by Using Only 1×VDD Low-Voltage Devices for Mixed-Voltage I/O Buffers with 3×VDD Input Tolerance","authors":"M. Ker, Chang-Tzu Wang","doi":"10.1109/ASSCC.2006.357907","DOIUrl":null,"url":null,"abstract":"A new electrostatic discharge (ESD) protection design by using only 1timesVDD low-voltage devices for mixed-voltage I/O buffer with 3timesVDD input tolerance is proposed. A special ESD detection circuit has been proposed to improve ESD protection efficiency of ESD clamp device by substrate-triggered technique to achieve high ESD level. This design has been successfully verified in a 0.13-mum CMOS process to provide an excellent circuit solution for on-chip ESD protection in the mixed-voltage I/O buffers with 3timesVDD input tolerance.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357907","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A new electrostatic discharge (ESD) protection design by using only 1timesVDD low-voltage devices for mixed-voltage I/O buffer with 3timesVDD input tolerance is proposed. A special ESD detection circuit has been proposed to improve ESD protection efficiency of ESD clamp device by substrate-triggered technique to achieve high ESD level. This design has been successfully verified in a 0.13-mum CMOS process to provide an excellent circuit solution for on-chip ESD protection in the mixed-voltage I/O buffers with 3timesVDD input tolerance.
提出了一种仅使用1倍vdd低压器件用于输入容限为3倍vdd的混合电压I/O缓冲器的新型静电放电保护设计。提出了一种特殊的ESD检测电路,通过衬底触发技术提高ESD钳位器件的ESD保护效率,达到较高的ESD水平。该设计已在0.13 μ m CMOS工艺中成功验证,为具有3倍vdd输入容限的混合电压I/O缓冲器中的片上ESD保护提供了出色的电路解决方案。