Advances in electric charge measurements in semi-conducting structures by non-destructive thermal methods

S. Baudon, P. Notingher, S. Agnel, S. Holé
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引用次数: 2

Abstract

Stimuli space charge measurement methods can complement the microelectronic techniques in terms of sensitivity, charge localization and possibility to follow the electrical state of semi-conducting structures and components. In this paper, experimental set-ups based on thermal stimuli are used to obtain information about the electric charge distribution across metal-oxide-semiconductor structures of several hundreds of nanometers. Results obtained with thermal pulses and thermal steps are presented, studied and cross-correlated. They are confronted with analytical and numerical thermal and electrostatic simulations in order to assess and put into focus the possibilities of obtaining information about the charge distribution, particularly across the semiconductor and at the interface areas.
非破坏性热法测量半导体结构中电荷的研究进展
刺激空间电荷测量方法在灵敏度、电荷定位和跟踪半导体结构和元件电学状态的可能性等方面是微电子技术的补充。在本文中,基于热刺激的实验装置被用来获得关于几百纳米金属-氧化物-半导体结构的电荷分布信息。用热脉冲和热步骤得到的结果进行了介绍、研究和相互关联。他们面临着分析和数值的热和静电模拟,以评估和关注获得有关电荷分布的信息的可能性,特别是在半导体和界面区域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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