Quasi-optical Terahertz Devices Based on Silicon in CMOS and BiCMOS Technology

Abstract

This paper reports on our recent advances in CMOS-based electronic sources and detectors developed for the terahertz frequency range and examples of practical applications. The presented quasi-optical emitter-detector pair systems operate in the 200 - 266 GHz range exhibiting input power-related signal-to-noise ratio exceeding 70 dB in the direct detection regime for one Hz equivalent noise bandwidth. It combines a high-performance detector based on CMOS field-effect transistors and a voltage-controlled oscillator employing Si or SiGe bipolar transistors provided by the 65 nm CMOS or 130 nm BiCMOS fabrication processes.