A 2.4GHz SOI CMOS Power Amplifier for New Generation Bluetooth Application

Abstract

A 2.4GHz class E power amplifier (PA) for new generation Bluetooth Low Energy application is designed and implemented in 22nm silicon on insulator (SOI) CMOS technology. The proposed PA is fully integrated, which has a two-stage differential structure with cascode stacking power transistors to improve the efficiency and prevent the breakdown with almost no increase in die area. S parameter simulation results show that output impedance matching S22 is less than - 12.1dB in the frequency range from 2.4GHz to 2.5GHz. The power amplifier achieves a power gain of 15.9dB, output power of 4.9dBm, and a power added efficiency(PAE) of 41.5%.