Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics

Abstract

Gallium Nitride has emerged as the technology of choice for the next generation high power electronics. However, its ability to handling high power also makes it the perfect technology candidate for highly survivable receiver components. This has obvious cost benefit for the footprint of the LNA will be smaller since no extra front-end protection circuitry is required. In this paper, a wideband Gallium Nitride HEMT low noise amplifier MMIC, using novel dual gate topology, has been design and manufactured to demonstrate Gallium Nitride low noise capability.