Design of an X-Ku band Low Noise Amplifier

Abstract

This paper presents the design and test of a low noise figure and high gain low noise amplifier (LNA) module at X-Ku band. In order to realize this kind of characteristic, a two-stage topology was used which the transistors used in this design are NE3210S01 manufactured by NEC. The matching circuit of input, output and interstage is designed with assistance of joint simulation of HFSS and ADS. The measured noise figure of the LNA is less than 1.2dB and the input and output VSWR is less than 2.0. Measured linear gain of the module is greater than 20dB over the a testing bandwidth of 2GHz at room temperature..